| PART |
Description |
Maker |
| STD9N10-1 STD9N10T4 STD9N10 |
N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR N沟道100V 0.23欧姆- 9A条的DPAK /像是iPak功率MOS器件
N-CHANNEL 100V - 0.23 & - 9A DPAK/IPAK MOSFET TRANSISTOR
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
|
| HUF75645P3 HUF75645S3S HUF75645P3NL HUF75645S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 75A条（丁）|63AB
75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
TRANSISTOR,MOSFET
75A, 100V, 0.014 Ohm, N-Channel, UltraFETPower MOSFETs
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL
Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| MJF122-D MJF127 |
Complementary Power Darlingtons For Isolated Package Applications
Power 5A 100V Darlington NPN
Power 5A 100V PNP
|
ON Semiconductor
|
| 2SD2398 |
Power Transistor (100V / 2A)
|
ROHM
|
| ZDT6753TA ZDT6753-15 ZDT6753TC |
100V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SM-8
|
Diodes Incorporated
|
| SPI47N10L SPP47N10L SPB47N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=26mOhm, 47A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| STD6N10 STD6N10-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-251
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| ZX5T953G-15 |
100V PNP MEDIUM POWER TRANSISTOR IN SOT223
|
Diodes Incorporated
|
